TRENDS IN INDIUM PHOSPHIDE MICROELECTRONICS

Magnetopolaron interactions in n-type indium phosphide

Electronic structure of indium phosphide clusters: anion

Ž . Photoelectron spectra for indium phosphide InP cluster anions comprised of up to 27 atoms were measured at a photodetachment wavelength of 266 nm. Results are presented for cluster anions of both stoichiometric and non-stoichiometŽ y y . Ž . ric composition In P , In P ; xs1–13 . In P exhibits the lowest electron affinity EA of all the clusters studied, x x xq1 x 3 3 indicating a particular...

Indium Phosphide Quantum Dots in GaP and in In0.48Ga0.52P

The growth and structural properties of self-assembled InP quantum dots are presented and discussed, together with their optical properties and associated carrier dynamics. The QDs are grown using gas-source molecular-beam epitaxy in and on the two materials In0.48Ga0.52P (lattice matched to GaAs) and GaP. Under the proper growth conditions, formation of InP dots via the StranskiKrastanow mecha...

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orie...

Indium phosphide nanowires and their applications in optoelectronic devices.

Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphid...