Tunable Electrical Properties of Ti-B-N Thin Films Sputter-Deposited by the Reactive Gas Pulsing Process
نویسندگان
چکیده
Titanium-boron-nitrogen (Ti-B-N) thin films were deposited by RF reactive magnetron sputtering using a titanium diboride (TiB2) target in an argon + nitrogen mixture. The mass flow rate was kept constant, whereas that of pulsed during the deposition. A constant pulsing period P = 10 s used, and introduction time gas (duty cycle (dc)) systematically varied from dc 0 to 100% period. This process allowed deposition Ti-B-N with various boron concentrations. Such adjustable concentrations also led changes their electronic transport properties. Boron contents exhibited reverse evolution as function duty cycle, which correlated transition metallic semiconducting-like behavior. percolation model applied electrical conductivity parameters, assuming some correlations film nanostructure.
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ژورنال
عنوان ژورنال: Coatings
سال: 2022
ISSN: ['2079-6412']
DOI: https://doi.org/10.3390/coatings12111711