Tuning exciton recombination rates in doped transition metal dichalcogenides

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative non-radiative recombination pathways is thus of crucial importance not only fundamental studies but also design future nanoscale on-chip devices. Here, we investigate doping exciton-exciton annihilation (EEA) impact on photoluminescence quantum yield different TMD samples related heterostructures. We demonstrate EEA threshold increases highly doped samples, where trions dominates.