Tuning the transient opto-electronic properties of few-layer MoS2 nanosheets via substrate nano-patterning
نویسندگان
چکیده
منابع مشابه
Innovative patterning method for modifying few-layer MoS2 device geometries
When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Ga...
متن کاملMoS 2 MoS2: choice substrate for accessing and tuning the electronic properties of graphene.
One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite and hexagonal boron nitride (h-BN), still pose limitations: graphite being metallic does not allow gating, while both h-BN and graphite, having lattice struc...
متن کاملElectrochemically induced Fenton reaction of few-layer MoS2 nanosheets: preparation of luminescent quantum dots via a transition of nanoporous morphology.
Electrochemically induced Fenton (electro-Fenton) reaction was used for efficient and controllable preparation of hydroxyl radicals, leading to the generation of luminescent quantum dots through etching of as-exfoliated MoS2 nanosheets. Morphologic changes of MoS2 nanosheets during the electro-Fenton reaction were monitored using transmission electron microscopy, showing that etching of MoS2 na...
متن کاملThe role of electronic coupling between substrate and 2D MoS2 nanosheets in electrocatalytic production of hydrogen.
The excellent catalytic activity of metallic MoS2 edges for the hydrogen evolution reaction (HER) has led to substantial efforts towards increasing the edge concentration. The 2H basal plane is less active for the HER because it is less conducting and therefore possesses less efficient charge transfer kinetics. Here we show that the activity of the 2H basal planes of monolayer MoS2 nanosheets c...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: EPJ Web of Conferences
سال: 2020
ISSN: 2100-014X
DOI: 10.1051/epjconf/202023807006