Two-Electron Transition in Homoepitaxial GaN Layers
نویسندگان
چکیده
منابع مشابه
Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24GHz have been performed on a series of MBE-grown Mg-doped (10–10 cm ) GaN homoepitaxial layers. High-resolution PL at 5K revealed intense bandedge emission with narrow linewidths (0.2–0.4meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for G...
متن کاملDirection-Dependent Homoepitaxial Growth of GaN Nanowires
formation of a fluorescent-dye layer on the surface of porous alumina, the porous alumina substrate was dipped in an ethanol solution containing 20 wt.-% dendrimer [13] and 4 × 10 M pyrromethene 597 (EXITON) for 1 min and then dried. The thickness of the fluorescent-dye layer was approximately 1 lm. Optically pumped lasing experiments were performed using a frequency doubled Nd:yttrium aluminum...
متن کاملHigh breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and ...
متن کاملStructural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy
We perform a transmission electron microscopy (TEM) characterization of blue light-emitting diode epiwafers grown homoepitaxially on a c-plane GaN substrate and compare with such grown on sapphire. We find a threading dislocation (TD) density as low as 2 · 10 cm in homoepitaxial growth, which is 1/30 of that in sapphire-based material. A unique type of inverted pyramid defect with diameter 650 ...
متن کاملTransition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas
a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia b Department of Physics, University of Central Florida, Orlando, FL 32816-2385, USA c Graduate Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan 333, Taiwan d Institute of Electro-Optical Engineering, Green Technology Research Center, Chang Gung University, T...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1997
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.92.742