Two-layer Hall effect model for intermediate band Ti-implanted silicon
نویسندگان
چکیده
منابع مشابه
Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon
A differential Hall effect technique has been developed to obtain doping profiles at a depth resolution down to 2 nm with junction depths of about 20 nm. We have determined the electrical characteristics of 531014 Sb+ cm−2 implanted in (100) silicon at an energy of 5 keV. A comparison was made between carrier concentration profiles and secondary ion mass spectroscopy measurements of the atomic ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2011
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3561374