Two-Photon Direct Laser Writing Beyond the Diffraction Limit Using the Nanopositioning and Nanomeasuring Machine

Abstract Since the first realization of two-photon direct laser writing (DLW) in Maruo et al. (Opt Lett 22:132–134, 1997), manufacturing using techniques spread out many laboratories all over world. Photosensitive materials with different material properties open a new field for micro- and nanofabrication. The achievable structuring resolution this technique is reported to be sub-100 nm (Paz J. Laser Appl. 24:042004, 2012), while smallest linewidth 25 could shown Tan (Appl Phys 90:071106, 2007). In our approach, combination DLW nanopositioning nanomeasuring machine NMM-1 offers an improvement from engineering side regarding ultra-precise positioning (Weidenfeller Adv Fabr Technol Micro/Nano Opt Photon XI 10544:105440E, 2018). One big benefit besides high 0.1 offered by range $$25\,\hbox {mm} \times 25\,\hbox 5\,\hbox {mm}$$ 25 mm × 5 (Jäger Technisches Messen 67:319–323, 2000; Manske Meas Sci 18:520–527, Thus, trans-scale fabrication without any stitching or systems necessary. immense synergy between highly precise demonstrated resist lines trenches whose center-to-center distance undergoes modified diffraction limit processes. accuracy enables defined illuminated lines. Hence, comparable huge width $$1.655\,\upmu \hbox {m}$$ 1.655 μ m due low effective numerical aperture 0.16, line 30 two written achieved. Although interrelationships achieving such narrow have not yet been clarified, much smaller trench widths are possible approach near future.