Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition

In chemical vapor deposition (CVD), homogeneous molybdenum concentration is important in synthesizing uniform thickness and large coverage of two-dimensional disulfide (2D-MoS2) films. Here, we synthesize few-layer MoS2 films with adequate over 50 mm2 size area using ultra-low trioxide (MoO3) precursor placed directly under a face-down silicon dioxide/silicon (SiO2/Si) substrate one-step heating CVD. The mass controlled by dispersing MoO3 powder ethanol (C2H5OH) varying the volume MoO3/C2H5OH solution coated on SiO2/Si substrates into 10, 20 25 µL. Field emission scanning electron microscopy images reveal that µL produces ∼93% 2D-MoS2 average Raman spectra show typical presence peaks around 378.8 cm−1 404 referring to E12g A1g modes, respectively. difference between two modes for all samples ∼25 cm−1, indicating estimated at 2.8 ± 0.44 nm 3.2 0.43 (∼6 layers) atomic force analysis. These findings suggest useful produce high