Vacancy defect complexes in silicon: Charges and spin order

Silicon vacancy in SiC: A high-spin state defect

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Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit

Quenched-vacancy induced spin-glass order.

The ferromagnetic phase of an Ising model in d=3 , with any amount of quenched antiferromagnetic bond randomness, is shown to undergo a transition to a spin-glass phase under sufficient quenched bond dilution. This result, demonstrated here with the numerically exact global renormalization-group solution of a d=3 hierarchical lattice, is expected to hold true generally, for the cubic lattice an...

Coherent control of the silicon-vacancy spin in diamond

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essen...

Defect Complexes in Silicon: Electronic Structures and Positron Annihilation

In silicon processing technology one of the most important current objectives is to achieve a controlled impurity doping in the crystal. Point defects and defect complexes present in the crystal influence in an important way the electrical activity and the diffusion properties of the dopants. In this thesis, defect complexes in silicon are studied by using quantum-mechanical electronic-structur...