van der Waals integration of GaN light-emitting diode arrays on foreign graphene films using semiconductor/graphene heterostructures
نویسندگان
چکیده
Abstract We report the van der Waals integration of micropatterned GaN light-emitting diodes (LEDs) onto foreign graphene films. micro-LEDs were selectively grown on a substrate using patterned SiO 2 mask, and then whole device structure was laterally fixed by polyimide insulator to form united layer. After fabrication, LED/graphene heterostructure piled layers typical wet transfer technique 2D crystals where bottom layer adhered only interactions. The transferred showed well-aligned crystallographic orientations as well reliable performances, including strong light emissions, good rectifying behaviors current density–voltage curve, simultaneity between electroluminescence intensity applied currents, ensuring electrical connections mechanical adhesions Furthermore, adhesiveness allowed us achieve wearability, while LEDs exhibited homogeneous emissions under various bending conditions because negligible external stress in discrete micro-LEDs.
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ژورنال
عنوان ژورنال: Npg Asia Materials
سال: 2022
ISSN: ['1884-4049', '1884-4057']
DOI: https://doi.org/10.1038/s41427-022-00403-6