W-Band GaN HEMT Switch Using the State-Dependent Concurrent Matching Method

In this study, a W-band GaN single-pole single-throw (SPST) switch was designed. To realize the pass and isolation modes of SPST switch, we proposed design technique unit branch consisting one transistor transmission. The characteristic impedance length transmission line were determined by angle at which straight connecting impedances on off states meets real axis Smith chart. Using technique, matching networks for are concurrently completed. order to improve insertion loss characteristics size number branches investigated. verify feasibility designed using 100 nm HEMT process. measured below 2.9 dB above 23.5 dB, respectively, in frequency range from 91 GHz 101 GHz.