Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te
نویسندگان
چکیده
منابع مشابه
Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te
Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi₂Se₂Te crystals. Angle-resolved photoemission spectrosco...
متن کاملCompetition between weak localization and antilocalization in topological surface states.
A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened at the Dirac point by magnetic doping. It is found that, while random magnetic scattering always drives the system from the symplectic to the unitary class, ...
متن کاملCrossover between weak antilocalization and weak localization in a magnetically doped topological insulator.
We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the m...
متن کاملCompeting weak localization and weak antilocalization in ultrathin topological insulators.
We demonstrate evidence of a surface gap opening in topological insulator (TI) thin films of (Bi(0.57)Sb(0.43))(2)Te(3) below six quintuple layers through transport and scanning tunneling spectroscopy measurements. By effective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic fields in nonmagnet...
متن کاملSurface States Transport in Topological Insulator Nanowires
We investigate the transport properties of topological insulator (TI) Bi0.83Sb0.17 nanowires. Single-crystal nanowire samples with diameters ranging from 75 nm to 1.1 μm are prepared using high frequency liquid phase casting in a glass capillary; cylindrical single crystals with (101̄1) orientation along the wire axis are produced. Bi0.83Sb0.17 is a narrow-gap semiconductor with an energy gap at...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2015
ISSN: 2158-3226
DOI: 10.1063/1.4917455