Silicon Based Colloidal Quantum Dot and Nanotube Lasers

نویسندگان

  • Pallab Bhattacharya
  • Junseok Heo
  • Sishir Bhowmick
چکیده

18. NUMBER

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A solution-processed 1.53 mum quantum dot laser with temperature-invariant emission wavelength.

Sources of coherent, monochromatic short-wavelength infrared (1-2 mum) light are essential in telecommunications, biomedical diagnosis, and optical sensing. Today's semiconductor lasers are made by epitaxial growth on a lattice-matched single-crystal substrate. This strategy is incompatible with integration on silicon. Colloidal quantum dots grown in solution can, in contrast, be coated onto an...

متن کامل

Introducing nanostructure patterns for performance enhancement in PbS colloidal quantum dot solar cells

With attention to the thin film structure of colloidal quantum dot solar cells, in this paper in order to improvement of active layer absorption of them, we have proposed the use of nanostructure pattern for enhancement of their performance. For this purpose we have presented suitable nano hemisphare patterns in colloidal quantum dot solar cells for light trapping in absorption layer. Then with...

متن کامل

Effect of PbS Film Thickness on the Performance of Colloidal Quantum Dot Solar Cells

Colloidal quantum dots offer broad tuning of semiconductor band structure via the quantum size effect. In this paper, we present a detailed investigation on the influence of the thickness of colloidal lead sulfide (PbS) nanocrystals (active layer) to the photovoltaic performance of colloidal quantum dot solar cells. The PbS nanocrystals (QDs) were synthesized in a non-coordinating solvent, 1-oc...

متن کامل

Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...

متن کامل

Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.

We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon for the first time. A systematic comparison is made with heterogeneously integrated 1.55 μm quantum well lasers on silicon. Our results indicate up to 20 dB reduced sensitivity of the quantum dot lasers on silicon compared to the quantum wells.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013