Interface orbital engineering of large-gap topological states: Decorating gold on a Si(111) surface

نویسندگان

  • Bing Huang
  • Kyung-Hwan Jin
  • Houlong L. Zhuang
  • Lizhi Zhang
  • Feng Liu
چکیده

Bing Huang,1,2,* Kyung-Hwan Jin,2 Houlong L. Zhuang,3 Lizhi Zhang,2 and Feng Liu2,4, ,† 1Beijing Computational Science Research Center, Beijing 100193, China 2Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA 3Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544, USA 4Collaborative Innovation Center of Quantum Matter, Beijing 100084, China (Received 1 November 2015; revised manuscript received 28 January 2016; published 9 March 2016)

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface.

Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles calculations. We show that the Si(111) surface functionalized with one-third monolayer of halogen at...

متن کامل

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We sho...

متن کامل

Crystal Shape Engineering of Topological Crystalline Insulator SnTe Microcrystals and Nanowires with Huge Thermal Activation Energy Gap

Since different high-symmetrical crystal planes of topological crystalline insulator possess their own topological electronic structure, manipulating crystal shapes with distinct facets of SnTe nanostructures is crucial for the realization of desired topological surface properties. Here, we developed crystal shapes engineering for the controllable synthesis of SnTe microcrystals and nanowires w...

متن کامل

محاسبه سطح مشترک (111)Pb/Si با استفاده از نظریه تابعی چگالی

  Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...

متن کامل

Controlling the effective mass of quantum well states in Pb/Si(111) by interface engineering

The in-plane effective mass of quantum well states in thin Pb films on a Bi reconstructed Si(111) surface is studied by angle-resolved photoemission spectroscopy. It is found that this effective mass is a factor of 3 lower than the unusually high values reported for Pb films grown on a Pb reconstructed Si(111) surface. Through a quantitative low-energy electron diffraction analysis the change i...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2016