Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

نویسندگان

  • Hao Zhu
  • Qiliang Li
  • Hung-Yu Wang
چکیده

This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent basis for low-power, high-density and high-reliability non-volatile memory applications. Recently, solid-state non-volatile memory devices based on redox-active molecules have been reported, exhibiting fast speed, low operation voltage, excellent endurance and multi-bit storage, outperforming the conventional floating-gate flash memory. Such high performance molecular memory will lead to promising on-chip memory and future portable/wearable electronics applications.

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تاریخ انتشار 2015