Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si/SiGe resonant interband tunnel diodes via electron tunneling spectroscopy
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چکیده
participation in Si/SiGe resonant interband tunnel diodes via electron tunneling spectroscopy Ronghua Yu, R. Anisha, Niu Jin, Sung-Yong Chung, Paul R. Berger, Thomas J. Gramila, and Phillip E. Thompson Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA Naval Research Laboratory, Washington, DC 20375, USA
منابع مشابه
High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition
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تاریخ انتشار 2009