Challenges of Electronic CAD in the Nano Scale Era

نویسندگان

  • Christian Hochberger
  • Andreas Koch
چکیده

Future nano scale devices will expose different characteristics than todays silicon devices. While the exponential growth of non recurring expenses (NRE, mostly due to mask sets) can be anticipated even for new technologies, problems such as the dramatically increased defect density require new approaches to build functional devices at reasonable prices. Improved CAD algorithms can help to solve these problems, or in some cases, they can be seen as enabling technology to broaden the use of paradigms such as reconfigurable computing. In this work we discuss in which stages of design, manufacturing, and deployment new CAD algorithms are required. 1 How to make Productive use of Billions of Logic Gates Following the road of Moore’s law, the number of transistors on a chip doubles every 24 months. After being valid for more than 40 years, the end of Moore’s law has been forecast many times now. Yet, technological advances have keep the progress intact. While the technological forecast for the next 5 to 10 years still concentrates on traditional CMOS logic realized on silicon, it seems likely that other technologies will take over in this time frame. A good candidate is CMOL[SFG03][DL05], which uses carbon nano tubes together with silicon-implemented CMOS circuits. With this technology, logic elements can be built at a much higher density than possible with lithographic processes using etching to build up physical structures. In the last year, graphene films have been found as another candidate technology for future digital devices[DSMJ09]. In contrast to CMOL, no actual logic devices have been built yet, leaving the design and cost implications unclear. However, it can be speculated that the extremely small structures used here will also be susceptible to higher defect rates.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Low-Power Adder Design for Nano-Scale CMOS

A fast low-power 1-bit full adder circuit suitable for nano-scale CMOS implementation is presented. Out of the three modules in a common full-adder circuit, we have replaced one with a new design, and optimized another one, all with the goal to reduce the static power consumption. The design has been simulated and evaluated using the 65 nm PTM models.

متن کامل

Nanotechnology application in cancer treatment

Chemotherapy has been the main known treatment for cancer diseases. However, its achievement rate remains low, mainly because of the restricted accessibility of drugs to the tumor tissue, their painful toxicity, and development of multi-drug resistance. In recent years, either better understanding of tumor biology or development of the ever-growing field of nanotechnology has proposed new treat...

متن کامل

Fluidic Self-Assembly of Nanowires

In recent years, the scaling of microelectronic, photonic and micro-electromechanical systems (MEMS) to the 50-500 nm length scale has challenged the capability of conventional micro-fabrication technologies in the cost-effective, mass production of devices and integrated systems [1]. There is an increasing need to develop new nano-fabrication technologies to address the challenges of decreasin...

متن کامل

Confrontation of Iranian Contemporary Architecture with Electronic era

Technology has had many influences on the Iranian society in different eras. Today, information and telecommunication technologies have revolutionized the basic structures of society and a new network society has been propagated inside the traditional and semi-modern context. In countries like Iran, which are in the process of modernization, a chaos deriving from the transition period is obs...

متن کامل

A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009