Comment on "Effects of disorder on ferromagnetism in diluted magnetic semiconductors".

نویسندگان

  • C Timm
  • F Schäfer
  • F Von Oppen
چکیده

electron energy relative to the valence band top for x 0:05, averaged over 100 configurations of 200 Mn impurities (dark gray area). The light gray bar denotes the GaAs gap. The dashed line shows the Fermi energy for p 0:1. Inset: Average Mn (positive) and hole (negative) spin polarizations for the same parameters. The dotted curves have been obtained with overlap matrix elements t r > 0 as in Ref. [1], the solid curves with the correct t r < 0, each for three configurations. P H Y S I C A L R E V I E W L E T T E R S week ending 17 JANUARY 2003 VOLUME 90, NUMBER 2

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عنوان ژورنال:
  • Physical review letters

دوره 90 2  شماره 

صفحات  -

تاریخ انتشار 2003