Zn Gas-Phase Doping of InAs Nanostructures
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منابع مشابه
Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn.
Gas phase p-doping of InAs nanowires with Zn atoms is demonstrated as an effective route for enabling postgrowth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of high-performance gated diodes and p-MOSFETs. High Zn concentrations with electrically active content of approximately 1 x 10(19) cm(-3) are achieved which is essential for compen...
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تاریخ انتشار 2012