The Open University ’ s repository of research publications and other research outputs Responsivity mapping techniques for the non - positional CCD : the swept charge device CCD 236

نویسندگان

  • P. H. Smith
  • N. J. Murray
  • J. P. D. Gow
چکیده

The e2v CCD236 is a swept charge device (SCD) designed as a soft X-ray detector for spectroscopy in the range 0.8 keV to 10 keV [1]. It benefits from improvements in design over the previous generation of SCD (the e2v CCD54) [2] to allow for increased detector area, a reduction in split X-ray events and improvements to radiation hardness [3]. To enable the suppression of surface dark current the device is clocked continuously, therefore there is no positional information making responsivity variations difficult to measure. This paper describes investigated techniques to achieve a responsivity map across the device using masking and XRF, and spot illumination from an organic light-emitting diode (OLED). The results of this technique should allow a deeper understanding of the device sensitivity and allow better data interpretation in SCD applications.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Responsivity mapping techniques for the non - positional CCD ; the swept charge device CCD 236

The e2v CCD236 is a swept charge device (SCD) designed as a soft X-ray detector for spectroscopy in the range 0.8 keV to 10 keV [1]. It benefits from improvements in design over the previous generation of SCD (the e2v CCD54) [2] to allow for increased detector area, a reduction in split X-ray events and improvements to radiation hardness [3]. To enable the suppression of surface dark current th...

متن کامل

The Open University ’ s repository of research publications and other research outputs Validation of NIEL for 1 MeV electrons in silicon using

For future space missions that are visiting hostile electron radiation environments, such as ESA’s JUICE mission, it is important to understand the effects of electron irradiation on silicon devices. This paper outlines a study to validate and improve upon the Non-Ionising Energy Loss (NIEL) model for high energy electrons in silicon using Charge Coupled Devices (CCD), CMOS Imaging Sensors (CIS...

متن کامل

The Open University ’ s repository of research publications and other research outputs The relationship between pumped traps and signal loss in buried channel CCDs

Copyright and Moral Rights for the articles on this site are retained by the individual authors and/or other copyright owners. For more information on Open Research Online's data policy on reuse of materials please consult the policies page. ABSTRACT Pocket-pumping is an established technique for identifying the locations of charge trapping sites within the transport channels of CCDs. Various p...

متن کامل

The Open University ’ s repository of research publications and other research outputs Learning the language of school history : the role of linguistics in mapping the writing demands of the sec - ondary school curriculum

The Open University's repository of research publications and other research outputs Learning the language of school history: the role of linguistics in mapping the writing demands of the secondary school curriculum Journal Article How to cite: Coffin, Caroline (2006). Learning the language of school history: the role of linguistics in mapping the writing demands of the secondary school curricu...

متن کامل

’ s repository of research publications and other research outputs Validation of NIEL for 1 MeV electrons in silicon using

For future space missions that are visiting hostile electron radiation environments, such as ESA’s JUICE mission, it is important to understand the effects of electron irradiation on silicon devices. This paper outlines a study to validate and improve upon the Non-Ionising Energy Loss (NIEL) model for high energy electrons in silicon using Charge Coupled Devices (CCD), CMOS Imaging Sensors (CIS...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014