High temperature rapid thermal annealing of phosphorous ion implanted InAs/ InP quantum dots

The effect of high temperature annealing of the InAs/ InP quantum dots QDs containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence PL intensity and reduced PL linewidth. The effect of high energy 450 keV phosphorous ion implantation at room temperature with doses of 5 1011–5 1013 ions/cm2 with subsequent high temperature 750–850 °C rapid thermal annealing is also studied. A large implantation-induced energy shift of up to 309 meV 400 nm is observed. The implanted samples annealed at 850 °C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750 °C. © 2007 American Institute of Physics. DOI: 10.1063/1.2710006