Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure
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Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures
This paper presents a study on the effect of matrix material on the morphology and optical properties of self-assembled InP-based InAsSb nanostructures. Due to the differences in surface roughness of the growth front, In0.53Ga0.47As matrix layer induces the formation of short quantum dashes QDashes and elongated quantum dots, while InP and In0.52Al0.48As matrix layers promote the formation of l...
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Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP
Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InA...
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تاریخ انتشار 2012