3D-Solenoid MEMS RF Inductor Design in Standard CMOS Technology
نویسندگان
چکیده
A new 3-D solenoid-inductor structure that is compatible with standard CMOS technology is proposed. Simulation shows excellent area efficiency of more than 80% saving over conventional planar spiral inductor. If combined with post-micromaching, a peak quality factor greater than 10 at 30GHz can be realized.
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تاریخ انتشار 2001