Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.

Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm and 0.5 mm) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/ cm for 0.06 mm diodes; 227 kV/cm for 0.5 mm diodes). The results of the X-ray measurements ...

Plasma characterization of the gas-puff target source dedicated for soft X-ray microscopy using SiC detectors

Extreme ultraviolet (EUV) and soft X-ray (SXR) radiations have a wide range of scientifi c [1], biomedical [2], and industrial applications [3]. For these reasons, monitoring the radiation parameters on line, such as the energy, intensity, angular distribution and reproducibility becomes very important. Semiconductor detectors play an important role due to their high sensitivity, linearity and ...

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low da...

Graphite based Schottky diodes on Si, GaAs, and 4H-SiC

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes