Boron induced charge traps near the interface of Si/SiO2 probed by second harmonic generation

نویسندگان

  • Heungman Park
  • Jingbo Qi
  • Ying Xu
  • Sharon M. Weiss
  • Bridget R. Rogers
چکیده

Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Chemical and Biomolecular Engineering, Nashville, Vanderbilt University, Tennessee 37235, USA Department of Applied Science, College of William and Mary, Williamsburg, Virginia 23187, USA National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA Zomega Terahertz Corporation, Troy, New York 12180, USA

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO2 interfaces

The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO2 interfaces is studied experimentally in planar Si(001)-SiO2-Cr MOS structures by optical secondharmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon E1 transition of silic...

متن کامل

Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation

second harmonic generation H. Park, J. Qi, Y. Xu, K. Varga, S. M. Weiss, B. R. Rogers, G. Lüpke, and N. Tolk Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashvi...

متن کامل

Ionizing Radiation and Hot Carrier E ects in SiC MOS Devices

We performed comparative studies of radiation-induced interface trap generation at n-6H-SiC/SiO2 and Si/SiO2 interfaces for high doses of low energy x-rays in the range 0 to 200 Mrad (Si). We found that radiation-induced interface trap generation at the n-6H-SiC/SiO2 interface is much lower than at the Si/SiO2 interface. The experiments provide evidence of interface trap generation near the SiC...

متن کامل

The Radiation Response of the High Dielectric-Constant Hafnium Oxide/Silicon System

We have explored the radiation response of the HfO2/Si system with a combination of capacitance versus voltage and electron spin resonance measurements on capacitor and bare oxide structures subjected to Co gamma irradiation and vacuum ultraviolet irradiation. Our studies have utilized both (100)Si and (111)Si substrate structures. Capacitors have been irradiated under both positive and negativ...

متن کامل

Optical second harmonic generation studies of ultrathin high-k dielectric stacks

We report an investigation of charge transfer in high-k dielectric stacks on Si by second harmonic generation sSHGd. Ultrathin s2–6 nmd films of HfO2, ZrO2, and Al2O3 grown on Si surfaces by atomic layer deposition were investigated and compared to conventional SiO2-based gate dielectrics. From the SHG rotational anisotropy sSHG-RAd of Si-shigh-kd and Si–SiO2 systems, optical roughness of the f...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2010