Formation of hydrogenated graphene nanoripples by strain engineering and directed surface self-assembly

We propose a class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first-principles calculations. They are formed via a twostep combinatorial approach: first by strain-engineered pattern formation of graphene nanoripples, followed by a curvature-directed self-assembly of H adsorption. It offers a high level of control of the structure and morphology of the HGNRs, and hence of their band gaps, which share common features with graphene nanoribbons. A cycle of H adsorption (desorption) at (from) the same surface locations completes a reversible metal-semiconductor-metal transition with the same band gap.