Silicon for optoelectronic

Sol – Gel Spin Coated Cadmium Sulphide ‎Thin Films on Silicon (1 0 0) Substrates for ‎Optoelectronic Applications

Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. In this work CdS thin films were deposited on p – type silicon substrates by sol – gel spin coating method at different substrate temperatures. The CdS deposited wafers were characterized by X‐ray diffracti...

Nano-optoelectronic Integration on Silicon Nano-optoelectronic Integration on Silicon Nano-optoelectronic Integration on Silicon

All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. Modern silicon technology offers unprecedented spatial and temporal con...

Recent developments in silicon optoelectronic devices

Due to the rapid growth of the internet and multi-media communication networks, there are urgent needs and tremendous commercial values in the development of optoelectronics integrated circuits (OEICs). This work reviews the recent developments and the prospect of silicon-based integrated optoelectronic circuits (Si-OEICs). The technological aspects of porous silicon and oxynitride devices for ...

Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications

This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were m...

New concept for the monolithic integration of optoelectronic circuits on Silicon substrate: Silicon Photonics

Influence of current density on refractive index of p-type nanocrystalline porous silicon

Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...