Parallel Implementation of a Gaas Mesfet Electro-thermal Simulation on a Transputer-based System
نویسنده
چکیده
The numerical simulation of a GaAs MESFET device on a transputer-based parallel system is presented. The physical modelling consists of a comprehensive two-dimensional energy transport model taking into account thermal heating effects within the device lattice. The semiconductor equations were solved by an SOR point iterative method using a finite difference discretisation scheme. Algorithms targeted at message passing Multiple-Instructions Multiple-Data (MIMD) distributed memory architectures are described. The efficiency and stability of the parallel algorithms are briefly discussed. A parallel speedup of 14.3 was obtained on an array of 16 transputers.
منابع مشابه
Numerical Simulation of a GaAs MESFET Device using Parallel Processing Techniques with Adaptive Meshing and Dynamic Load Balancing on a Transputer Network
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تاریخ انتشار 2007