Plasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
نویسندگان
چکیده
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers.
منابع مشابه
Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane
Thin silicon dioxide films have been studied as a function of deposition parameters and annealing temperatures. Films were deposited by tetraethoxysilane (TEOS) dual-frequency plasma enhanced chemical vapor deposition with different time interval fractions of high-frequency and low-frequency plasma depositions. The samples were subsequently annealed up to 930 ◦C to investigate their stress beha...
متن کاملCharacterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channel
In order to reach high level of transistor performances, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in conduction channel is to generate strain in the structure induced by process. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhan...
متن کاملRemote plasma chemical vapour deposition of silicon nitride films
The relatively new technique of remote plasma enhanced
متن کاملHighly stable silicon dioxide films deposited by means of rapid thermal - low-pressure chemical vapor deposition onto InP
An attempt was made to deposit a high thermally stable silicon dioxide (SiOZ) film onto InP substrates. The films were grown by rapid thermal, low-pressure chemical vapor deposition (RT-LPCVD), using pure oxygen (0,) and 2% diluted silane (SiH,+) in argon (Ar) gas sources, in the temperature range of 350-550 “C and pressure range of 3-10 Torr. The SiO,/InP structures were heated, post-depositio...
متن کاملEffect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
The effect of deposition conditions on characteristic mechanical properties – elastic modulus and hardness – of low-temperature PECVD silicon nitrides is investigated using nanoindentation. It is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mech...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017