R-matrix theory for magnetotransport properties in semiconductor devices

Many problems in nano and molecular electronics require the solution of the Schrodinger equation for scattering states. R-matrix theory, a technique first introduced in nuclear physics and widely used in atomic and molecular physics, has recently been adapted to calculate the transport properties of solid-state devices. We have extended R-matrix theory to the general case of two-dimensional devices in the presence of an external perpendicular magnetic field. We apply this technique to a particular device and calculate the magnetotransport properties of a two-dimensional “cross” junction.