Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials

Bismuth telluride (Bi2Te3) and related compounds have recently attracted strong interest, owing to the discovery of the topological insulator properties in many members of this family of materials. The few-quintuple films of these materials are particularly interesting from the physics point of view. We report results of the micro-Raman spectroscopy study of the “graphene-like” exfoliated few-q...

Characterisation and optimisation of PECVD SiNx as an antireflection coating and passivation layer for silicon solar cells

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The Department of Electrical Engineering

Materials with Dirac-type electronic band structure have recently drawn much interest. These materials revealed unique electrical, thermal and optical properties, which can be potentially used in future highspeed electronics. In this dissertation research, I investigate on two different classes of Dirac materials: graphene and topological insulators of the bismuth telluride (Bi2Te3) family. The...

Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Ultraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations

In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...