Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and below

Constant downscaling of transistors leads to increase the relative difference between Lmask and Leff . Effective length (Leff ) extractions are now crucial to avoid calculations errors on parameters such as the mobility, which can exceed 100% for shorter devices. We propose an industrially-adapted method to extract Leff by using an enhanced ”split C-V” method. Accurate and consistent values have been extracted (±1nm) and then correlated to mobility and HCI lifetime studies, as a function of Leff .