TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition
نویسندگان
چکیده
منابع مشابه
Failure mechanism of trench IGBT under short-circuit after turn-off
Power semiconductor devices under short-circuit are submitted to high current and high voltage simultaneously that induce high electrical and thermal stresses. Several types of event leading to failure can appear under short circuit conditions in IGBT depending on the device structure, current load and voltage levels. One particular short circuit event appears once the device has turned off. Af...
متن کاملPhysical Modeling of Igbt Turn on Behavior
Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. Under clamped inductive load condition at turn on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. A physics-based IGBT model is used that has been proved accurate in the simulation of IGBT turn off. Both resist...
متن کاملA step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation
A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify i...
متن کاملA Comprehensive Mathematical Model for Analysis of WR-Resolvers under Stator Short Circuit Fault
Wound-Rotor (WR) resolvers are the most widely used position sensors in applications with harsh environmental conditions. However, their performance is exposed to failure due to the high risk of short circuit (SC) fault. Although the output current of the resolver is negligible, its thin copper wires increase the probability of the short circuit fault. To avoid the propagation of the turn-to-tu...
متن کاملStructure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I
Compact model for expressing turn-off waveform for advanced trench gate IGBTs is proposed even under high current density condition. The model is analytically formulated only with device structure parameters so that no fitting parameters are required. The validity of the model is confirmed with TCAD simulation for 1.2 kV to 6.5 kV class IGBTs. The proposed turn-off model is sufficiently accurat...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015