Influence of Cu Diffusion Conditions on the Switching of Cu-SiO₂-Based Resistive Memory Devices

Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices

Effects of a CuxO Buffer Layer on a SiOx-Based Memory Device in a Vaporless Environment

The resistive switching characteristics of the Cu/SiO x /Pt structure (control sample) exhibited a direct correlation to humidity. The H2O vapor formed the Cu oxide at the Cu/SiO x interface, and Cu ions were injected from the Cu oxide into the SiO x layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environmen...

Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu ...

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeOx/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HRTEM). Improved memory characteristics are observed for the Cu/GeOx/W structures as compared to the ...

On the resistive switching mechanisms of Cu/ZrO2 :Cu/Pt

We use convincing experimental evidences to demonstrate that the nonpolar resistive switching phenomenon observed in Cu /ZrO2 :Cu /Pt memory devices conforms to a filament formation and annihilation mechanism. Temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state "ON state#. Further analysis reveals that the physical...