Effects of molecular environments on the electrical switching with memory of nitro-containing OPEs

نویسندگان

  • N. Gergel-Hackett
  • N. Majumdar
  • Z. Martin
  • N. Swami
  • L. R. Harriott
  • J. C. Bean
  • Charles L. Brown
  • G Zangari
چکیده

An oligo phenylene ethynylene OPE molecule with a nitro side group has exhibited electrical switching with memory and thus has potential for use in molecular electronic devices. However, different research groups have reported different electrical behaviors for this molecule. In addition to variations among test structures, differences in local molecular environments could be partially responsible for the differences in the reported results. Thus, we tested four variations of a nitro-OPE/ dodecanethiol monolayer in the same type of nanowell test device to study how the environment of the nitro-OPE affects the observed electrical behavior. We found that the density of the nitro-containing molecules in the device altered the observed electrical switching behavior. Further, we found a positive correlation between the disorder of the monolayer and the observed electrical switching behavior. This correlation is consistent with suggestions that nitro molecule switching may depend on a conformational change of the molecule, which may be possible only in a disordered monolayer. © 2006 American Vacuum Society. DOI: 10.1116/1.2208994

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The Electrical Behavior of Nitro Oligo(Phenylene Ethynylene)’s in Pure and Mixed Monolayers

In order to realize molecular electronic devices, molecules with electrically interesting behavior must be identified. One molecule that has potential for use in devices is an oligo(phenylene ethynylene) (OPE) molecule with nitro sidegroup(s). These “nitro” molecules have been reported to show electrical switching with memory behavior, as well as negative differential resistance (NDR). However,...

متن کامل

Study of the room temperature molecular memory observed from a nanowell device

We tested the electrical characteristics of an oligo phenylene ethynylene OPE molecule with one nitro side group, an OPE with two nitro side groups, and an OPE with no nitro side groups in our nanowell device. The OPE molecule with nitro side group s showed switching behavior with memory as well as nonreversible negative differential resistance NDR . Current-voltage I-V characteristics showed a...

متن کامل

Optimization of Bistability in Nonlinear Chalcogenide Fiber Bragg Grating for All Optical Switch and Memory Applications

We solve the coupled mode equations governing the chalcogenide nonlinear fiber Bragg gratings (FBGs) numerically, and obtain the bistability characteristics. The characteristics of the chalcogenide nonlinear FBGs such as: switching threshold intensity, bistability interval and on-off switching ratio are studied. The effects of FBG length and its third order nonlinear refractive index on FBG cha...

متن کامل

FPGA Implementation of a Hammerstein Based Digital Predistorter for Linearizing RF Power Amplifiers with Memory Effects

Power amplifiers (PAs) are inherently nonlinear elements and digital predistortion is a highly cost-effective approach to linearize them. Although most existing architectures assume that the PA has a memoryless nonlinearity, memory effects of the PAs in many applications ,such as wideband code-division multiple access (WCDMA) or orthogonal frequency-division multiplexing (OFDM), can no longer b...

متن کامل

Analytical Study of Optical Bi-Stability of a Single-Bus Resonator Based on InGaAs Micro-Ring Array

In this paper, for the first time to our knowledge, we investigate the optical bi-stability in a compact parallel array of micro- ring resonators with 5μm radius, induced by optical nonlinearity. Due to the nature of perfect light confinement, resonance and accumulation process in a ring resonator, optical nonlinear effects, even at small optical power of a few milliwatts in this structure are ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006