1200V Merged PIN Schottky Diode with Soft Recovery and Positive Temperature Coefficient
نویسندگان
چکیده
In 1992 International Rectifier Corp. introduced the first commercially available diode based on this concept [3]. The superior properties of those devices have been improved further by means of axial lifetime engineering [4-7]. The final result is an IGBT companion diode with low forward voltage drop, a positive temperature coefficient, soft reverse recovery, and high ruggedness. This paper shows the results of the new 1200V/75A device (active area: 48.6mm).
منابع مشابه
Parameter Extraction Software for Silicon Carbide Schottky, Merged Pin Schottky and Pin Power Diode Models
A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].
متن کاملPhysics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes
The paper presents the results of the application of physics-based mixed-mode simulations to the analysis and optimization of the reverse recovery for Si-based fast recovery diodes (FREDs) using Platinum (Pt) lifetime killing. The trap model parameters are extracted from Deep Level Transient Spectroscopy (DLTS) characterization. The model is validated against experimental characterization carri...
متن کاملSiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE
Abstract—This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in ...
متن کاملEfficiency Improvement with Silicon Carbide Based Power Modules - ISSUE 6 – SEPTEMBER 2009
Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...
متن کامل4,308V, 20.9 mO·cm 4H-SiC MPS Diodes Based on a 30μm Drift Layer
This paper reports the design, fabrication and characterization of high voltage 4H-SiC merged PiN/Schottky-barrier (MPS) diodes with an active area of 1.4mm. For comparison purposes, Schottky barrier, PiN and MPS diodes of smaller size (8.1x10mm) have also been designed and fabricated on the same wafer with a 30μm, n=2x10cm doped drift layer. The Schottky spacing between the adjacent p+ regions...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2002