Session 1 A Reliability and Design in Deep Submicron Technologies
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چکیده
Deep submicron technology introduces strong linkages between process, design, and reliability. Papers in this session talk about the effect of process defects on chip reliability estimation, measurement of circuit delay variations due to process variability, and future trends in power supply distribution as a result of interconnect scaling.
منابع مشابه
MOCA ARM: Analog Reliability Measurement based on Monte Carlo Analysis
Due to the expected increase of defects in circuits based on deep submicron technologies, reliability has become an important design criterion. Although different approaches have been developed to estimate reliability in digital circuits and some measuring concepts have been separately presented to reveal the quality of analog circuit reliability in the literature, there is a gap to estimate re...
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As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for i...
متن کاملBulk built in current sensors for single event transient detection in deep-submicron technologies
As device dimensions are scaled down, single event transients (SET) are increasingly affecting the reliability of integrated circuits. An SET is a transient voltage perturbation caused by an energetic particle strike at the semiconductor. This work studies the applicability of bulk built in current sensors (bulk-BICS) for SET detection in deep-submicron technologies. The bulk-BICS detects the t...
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Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...
متن کاملA Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs
A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few extra parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full range of operating v...
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تاریخ انتشار 2003