Intertwined electronic and structural phase transitions in the In/Si(111) interface.

نویسندگان

  • Jiandong Guo
  • Geunseop Lee
  • E W Plummer
چکیده

The structural (4 x 1) to (8 x 2) transition and the electronic metal to semimetal transition at the In/Si interface are studied with scanning tunneling microscopy and spectroscopy. Both transitions are gradual, resulting in a complex domain structure in the transition temperature regime. At these intermediate temperatures, the metallic (4 x 1) and semimetallic (8 x 2) domains coexist with each other and with new nanophases. By probing the two intertwined but distinguishable transitions at the atomic level, the interaction between different phases is visualized directly.

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عنوان ژورنال:
  • Physical review letters

دوره 95 4  شماره 

صفحات  -

تاریخ انتشار 2005