Epitaxial Si films on Ge(lO0) grown via H/Cl exchange
نویسندگان
چکیده
Thin Si films have been grown isothermally on Ge( 100) substrates using alternating exposures of Si,H6 and Si,C!16, maintaining chlorine and hydrogen surface termination. At 465 “C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si,H6 and 1 Si,Cl, exposure). At 475 “C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.
منابع مشابه
Ge films grown on Si substrates by molecular - beam epitaxy below 450 ° C
Ge thin films are grown on Si~001! substrates by molecular-beam epitaxy at 370 °C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 °C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be a...
متن کاملMagnetic Properties of Epitaxial and Polycrystalline Fe/Si Multilayers
Fe/Si multilayers with antiferromagnetic interlayer coupling have been grown via ion-beam sputtering on both glass and single-crystal substrates. High-angle x-ray diffraction measurements show that both sets of films have narrow Fe peaks, implying a large crystallite size and crystalline iron silicide spacer layers. Low-angle x-ray diffraction measurements show that films grown on glass have ro...
متن کاملX-ray studies of SiÕGeÕSi„001... epitaxial growth with Te as a surfactant
X-ray standing waves ~XSW! and grazing incidence x-ray diffraction ~GIXD! were used to investigate the crystallinity of ultrathin Ge films grown by molecular-beam epitaxy on Si~001! with and without Te as a surfactant. The Ge layer thickness ranged from 1 to 10 ML. The results clearly indicate that Ge films grown with Te have a higher degree of crystallinity compared to those grown without Te. ...
متن کاملEffect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si
Available online 21 October 2009
متن کاملA new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN ep...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1999