25 nm Omega FinFET: Three-dimensional Process and Device Simulations
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چکیده
This Sentaurus simulation project provides a template setup for three-dimensional process simulation and device simulations of Omega FinFETs. The threedimensional process simulation is based on a particularly robust approach in which geometry-altering and dopant-related processing steps are executed sequentially in two separate groups. The Sentaurus Workbench template project also performs 3D quantum transport Id–Vgs simulations using the density gradient model. The influence of the complex dopant redistribution during the short annealing (RTA) on the electrical characteristics of the final FinFET is discussed. In addition, the influence of quantum effects on this nanoscale device is investigated.
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تاریخ انتشار 1996