Effect of Asymmetrical Interface Charges on the Hysteresis and Domain Configurations of Ferroelectric Thin Films
نویسندگان
چکیده
Effect of Asymmetrical Interface Charges on the Hysteresis and Domain Configurations of Ferroelectric Thin Films I. B. Misirlioglu a , M. B. Okatan b & S. P. Alpay b a Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla-Orhanlı, 34956, Istanbul, Turkey b Department of Chemical, Materials, and Biomolecular Engineering, Materials Science and Engineering Program, and Institute of Materials Science, University of Connecticut, Storrs, Connecticut, 06269, USA
منابع مشابه
Giant flexoelectric effect in ferroelectric epitaxial thin films.
We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, an...
متن کاملTheoretical study on the influence of surface imperfections on the properties of ferroelectric thin films in first-order ferroelectric systems
A generalized Ginzburg–Landau–Devonshire (GLD) theory is used to study the properties of ferroelectric thin films sandwiched between two metal electrodes with a first-order phase transition. By taking into account the effect of the imperfect surface layer and a natural boundary condition, the temperature and film-thickness dependence of the spontaneous polarization and the dielectric susceptibi...
متن کاملAsymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films
at the transition temperature due to space charges in ferroelectric thin films I. B. Misirlioglu, M. B. Okatan, and S. P. Alpay Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla-Orhanli, 34956 Istanbul, Turkey Department of Chemical, Materials, and Biomolecular Engineering, Materials Science and Engineering Program, and Institute of Materials Science, University of Connecti...
متن کاملA possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films
We studied theoretically the hysteresis behavior of ferroelectric thin films. The anomalous ferroelectric response is discussed by use of a bilayer model. Electrical conductivities of the films have been taken into account. To model the effects of the inhomogeneity of polarization and permittivity across the interface, the film is assumed to possess a secondary dielectric/ferroelectric phase sa...
متن کاملMechanisms of imprint effect on ferroelectric thin films
We have developed a single/double layer model to explain horizontal shifting of measured D-E hysteresis loops imprint for ferroelectric thin films. Such phenomenon can be explained by considering three mechanisms or their multiple effects: 1 stress induced by film/electrode lattice mismatch or clamping, 2 domain pinning induced by, e.g., oxygen vacancies, or 3 degradation of ferroelectric prope...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011