New threshold voltage definition for undoped symmetrical DG MOSFET
نویسندگان
چکیده
Article history: Received 13 April 2010 Received in revised form 20 April 2011 Accepted 25 July 2011 Available online 30 August 2011 0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.07.083 ⇑ Corresponding author. Tel.: +48 784320627. E-mail address: [email protected] (P. Sałek). A new threshold definition is proposed for symmetrical undoped double gate MOS (DGMOS). Threshold voltage is calculated using the potential model described in [1] with only two fitting parameters, the values of which do not depend on device geometry. Comparison with the results of numerical simulations and other models of VT is presented and good accuracy of the new model is demonstrated. 2011 Elsevier Ltd. All rights reserved.
منابع مشابه
Small Signal Modeling of Scaled Double-Gate MOSFET for GHz Applications
The limits on scaling suggest the technology advancement for the solid-state devices. The double-gate (DG) MOSFET has emerged as an alternative device structure due to the certain significant advantages, i.e. increase in mobility, ideal sub-threshold slope, higher drain current, reduced power consumption and screening of source end of the channel by drain electric field (due to proximity to the...
متن کاملImpact of Height of Silicon Pillar on Vertical DG-MOSFET Device
Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In o...
متن کاملAnalysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function
733 Abstract— This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. ...
متن کاملSimulation and Analysis of DG-MOSFET for Ultra Low Power
The low power consumption and good speed has become an important issues in the minds of consumers as electronic items are increasing in every houses, everyday. VLSI has been very successful in this aspect as new and new technologies are been developed in VLSI, which has lead, a solution to the above problem. DG MOSFET, proposed in 1984 as “XMOS” by ETL is the most promising and leading contende...
متن کاملPerformance of Double Gate SOI MOSFET
The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET dev...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Microelectronics Reliability
دوره 52 شماره
صفحات -
تاریخ انتشار 2012