Progress in Infrared Photodetectors Since 2000

نویسندگان

  • Chandler Downs
  • Thomas E. Vandervelde
چکیده

The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

متن کامل

Photodetectors based on intersubband transitions using III-nitride superlattice structures.

We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz usi...

متن کامل

Electro-optical characterisation of InP nanowire based p-n, p-i-n Infrared photodetectors

High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, low noise, high conversion efficiency and allow a large wavelength range of detection from 750 nm to 1.3–1.55 μm in the optical communication system. These photodetector is used as an optical receiver which transforms the energy of optical radiation such as infrared, visible or ultrav...

متن کامل

Improved Near-Infrared Spectral Responsivity Scale

A cryogenic radiometer-based system was constructed at the National Institute of Standards and Technology for absolute radiometric measurements to improve detector spectral power responsivity scales in the wavelength range from 900 nm to 1800 nm. In addition to the liquid-helium-cooled cryogenic radiometer, the system consists of a 100 W quartz-tungsten-halogen lamp light source and a 1 m singl...

متن کامل

Quantum-dot infrared photodetectors: Status and outlook

This paper reviews the present status and possible future developments of quantum-dot infrared photodetectors (QDIPs). At the beginning the paper summarizes the fundamental properties of QDIPs. Next, an emphasis is put on their potential developments. Investigations of the performance of QDIPs as compared to other types of infrared photodetectors are presented. A model is based on fundamental p...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره 13  شماره 

صفحات  -

تاریخ انتشار 2013