Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit

Nanobundle network transistors (NBTs) have emerged as a viable, higher performance alternative to poly-silicon and organic transistors with possible applications in macroelectronic displays, chemical/biological sensors, and photovoltaics. A simple analytical model for I-V characteristics of NBTs (below the percolation limit) and a numerical model (above the percolation limit) is proposed. The physics-based predictive model provides a simple relation between transistor characteristics and design parameters which can be used for optimization of NBTs.