Realization of Nitrogen-Polar GaN Micro- and Nanostructures

We report on the selective area growth of N-polar GaN micrometer and sub-micrometer sized structures on structured sapphire wafers for applications in optical gas sensing. Optical lithography has been applied for patterning a SiO2-mask on the micrometer scale, whereas electron-beam lithography has been used on the nanometer scale. Subsequently, prismatically shaped GaN rods have been fabricated by selective area metal organic vapor phase epitaxy (MOVPE) and first experiments for the realization of GaInN quantum wells on the facets of such structures have been made.