Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer

We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tinoxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band. key words: terahertz, plasmon resonance, plasma instability, heterostructure, high-electron-mobility transistor (HEMT)