Influence of backsurface argon bombardment on SiO2–Si interface characteristics
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Ab initio Calculation of Tunneling Current through Ultra-Thin SiO2 Gate Dielectrics of MOS Structures, Including the Influence of Oxygen Vacancies on the Tunneling Current
Ab initio density functional theory and ballistic transport theory are applied to the calculation of tunneling current through ultra-thin SiO2 gate dielectrics. The Si/SiO2/Si model interface has been constructed by orienting a crystalline SiO2 (β−cristobalite) slab such that the misfit with Si (001) was minimized and no dangling bonds appear at the interface. The structure was then sandwiched ...
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تاریخ انتشار 1996