Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies
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منابع مشابه
AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC(000(1)over-bar)
A characterization of the graphitic overlayer that forms on 4H–SiCð000 1Þ substrates heated for ten minutes to temperatures T > 1350 C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increases with growth temperature. Parallel atomic force microscope (AFM) studies find a mesh-like network o...
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The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur...
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In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (Tgr from 1600 to 2000°C). For all the considered growth temperatures, few layers of graphene (FLG) conformally covering the 100 to 200-nm wide terraces of the SiC surface have been ob...
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تاریخ انتشار 2014