Development of Single-Crystal CVD-Diamond Detectors
نویسندگان
چکیده
Single-Crystal CVD-Diamond Detectors (SC-DD) of ~ 300μm thickness have been tested in Cave A with proton beams of Ep > 1AGeV as start detectors for minimum ionizing particles. Fast charge-sensitive amplifiers developed at GSI and Bucharest were used. At particle rates up to 1MHz, stable operation and detection efficiency of ~100% are observed. The measured time resolution of σ ≥ 330ps is not satisfying. The next step will be the test of ‘sandwich’ detectors providing shorter rise time at higher S/N ratio. In FRS [1] experiments, the energy-loss (ΔE) and the Z-resolution of three SC-DD of 400μm thickness, a size of 4x4mm and an active area of 3mm in diameter were measured using Xe projectiles of different energies: 334 AMeV, 740 AMeV and 1.2 AGeV, respectively. The fragments produced on a Be target of 4g/cm were identified via Bρ, ToF measured with lucite scintillators between S2 and S4, and ΔE into two MUSIC detectors placed at S4 in front and behind the diamonds. Even for the primary xenon beams the beam spot onto the diamonds was larger than the size of the active detector area. Due to ‘boarder’ events of different timing and shape, low-energetic tails appear in the raw energy spectra. However, for all three projectile energies the preliminary online data analysis shows an unexpected good ΔE/E resolution of 1%-2%, which is comparable to the resolution of the ionization chambers. In fragmentation spectra (Fig. 1) all particles are clearly identified with a ΔZ/Z ≤ 1.
منابع مشابه
Characterisation of Single-Crystal CVD-Diamond Detectors
Recently, the quality of intrinsic CVD Diamond (CVD-D) has tremendously been improved. The replacement of the previous used silicon substrates for growth by ultra-pure HPHT Single-Crystal (SC) {100}-oriented diamond provides homo-epitaxial grown material almost free of structural defects. Nevertheless, all substrates nominally {100}oriented show a certain amount of off-angle declination from th...
متن کاملElectrical and Photo Conductivities in Heteroepitaxial Quasi Single-Crystal CVD-Diamond Detectors
The properties of CVD Diamond (CVDD) detectors such as high mobility of charge carriers, radiation hardness, and low dark conductivity provide a detector material, which is suggested to be applied in high intensity heavy-ion beam environments where classical detector devices cannot be operated [1]. In the future FAIR experiments radiation-hard materials with large area will be required for a va...
متن کاملInvestigations of new samples of single-crystal CVD-diamond detectors
Single-crystal CVD diamond (scCVDD) for detector applications is grown on best quality HPHT single-crystal diamond substrates of (100) crystallographic orientation, because the incorporation of stacking faults or the creation of twin crystals is hereby more suppressed than, e.g., in the (111) growth direction. Any imperfection of the substrate may hand over in the CVD diamond film either as iso...
متن کاملMapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging
Diamond has been regarded as a promising radiation detector material for use as a solid state ionizing chamber for decades. The parameters degrading the charge transport from what is expected from an ideal crystal are still not completely understood. Recently, synthetic chemical vapor deposited CVD single crystal diamond has become available, offering the opportunity to study the properties of ...
متن کاملFirst Results of CVD-Diamond Detectors Grown on Large Iridium Substrates
A promising course for large-area ‘quasi’ single-crystal CVD diamond (scCVDD) is the heteroepitaxial growth on the multilayer structure Ir/YSZ/Si(001) [1] as developed at the University of Augsburg on 4inch wafers. Key issue is the similarity of the lattice constants of diamond (dDia = 3.567 Å) and Iridium (dIr = 3.834 Å). Figure 1 shows characterization results of two Diamond-on-Iridium (DoI) ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2007