Optimization of High-Speed SiGe HBTs
نویسندگان
چکیده
We present a methodology for characterization and optimization of SiGe HBTs from our 0.8 μm BiCMOS technology. It involves process calibration, device calibration employing two-dimensional device simulation, and automated Technology Computer Aided Design (TCAD) optimization. The simulation results show a very good agreement with experimental data. In particular, we perform an optimization of collector doping for specific requirements (high speed or high breakdown voltage).
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تاریخ انتشار 2001